Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing

Author

Mo, Q.W. ; Fan, T.W. ; Gong, Q. ; Wu, J. ; Wang, Z.G. ; Bal, Y.Q. ; Zhang, W.

Author_Institution

Inst. of Semicond., Acad. Sinica, Beijing, China

fYear

1998

fDate

1998

Firstpage

641

Lastpage

644

Abstract

Self-organized InAs quantum dots sheets are grown on an GaAs(100) substrate and capped by 80 nm GaAs layer with molecular beam epitaxy. Samples were annealed and characterized with Raman spectra, transmission electron microscopy (TEM) and photoluminescence (PL). The Raman spectra indicates arsenic clusters in the GaAs capping layer. The TEM analysis revealed the relaxation of strain in some InAs islands with the introduction of the network of 90° dislocations. In addition, the structural changes also lead to the changes of the PL spectra from the InAs islands. Their correlation was discussed. Our results suggest that annealing may be used to intentionally modify the properties of self-organized InAs islands on GaAs

Keywords

III-V semiconductors; Raman spectra; annealing; dislocation arrays; gallium arsenide; indium compounds; interface structure; island structure; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum dots; transmission electron microscopy; 80 nm; 90° dislocations; GaAs; GaAs capping layer; GaAs layer; GaAs(100); GaAs-InAs-GaAs; GaAs/InAs/GaAs structure; InAs islands; PL spectra; Raman spectra; TEM; arsenic clusters; molecular beam epitaxy; optical changes; photoluminescence; self-organized InAs islands; self-organized InAs quantum dots sheets; structure; thermal annealing; transmission electron microscopy; Annealing; Buffer layers; Gallium arsenide; Infrared detectors; Infrared spectra; Laboratories; Materials science and technology; Quantum dots; Temperature; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785971

Filename

785971