N- and p-type Si-SiGe hetero FETs

Author

König, Ulf

Author_Institution

DaimlerChrysler Res., Ulm, Germany

fYear

2000

fDate

2000

Firstpage

1

Lastpage

7

Abstract

The paper reviews the status of SiGe hetero field effect transistors. Essential layer structures for Schottky-, p-n junction-, MOS-gated devices are presented. Mobilities and sheet carrier concentrations are given. Currents, transconductances, frequencies at room- and cryo-temperatures, and high and low frequency noise elucidate the potential of this device concept. Finally, first circuit results are discussed

Keywords

Ge-Si alloys; carrier density; carrier mobility; elemental semiconductors; high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; reviews; semiconductor device noise; semiconductor materials; silicon; HEMTs; HF noise; LF noise; MODFETs; MOS-gated devices; Schottky-gated devices; Si-SiGe; Si-SiGe HFETs; Si/SiGe hetero FETs; hetero field effect transistors; high frequency noise; low frequency noise; mobilities; n-type devices; p-n junction-gated devices; p-type devices; reviews; sheet carrier concentrations; transconductances; Boron; Electron mobility; Epitaxial layers; FETs; Germanium silicon alloys; HEMTs; MODFETs; MOSFETs; Magnetic field measurement; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on

Conference_Location

Glasgow

Print_ISBN

0-7803-6550-X

Type

conf

DOI

10.1109/EDMO.2000.919017

Filename

919017