Study and mechanism analysis of photochemical oxidation for n-type mercury cadmium tellurium photoconductance detectors

Author

Yan-Li, Shi ; Guang-Di, Shen ; Xing-Hui, Wu ; Wen-Qing, Feng ; Tie-Jin, Chen

Author_Institution

Dept. of Electron. Eng., Beijing Polytech. Univ., China

fYear

1998

fDate

1998

Firstpage

645

Lastpage

648

Abstract

Instead of anodization, photochemical oxidation is used to perform the surface passivation of n-type mercury cadmium tellurium (HgCdTe) photoconductance detectors for the first time. X-ray photoelectron spectroscopy (XPS) is used to analyze the influence of the oxidation condition on the oxidation reaction. The passivation mechanism of photochemical oxidation is also studied. Comparing of the performances of the two kinds of detectors with each other, which were prepared under the same technique conditions by the anodization and the photochemical oxidation respectively, it shows that the results of photochemical oxidation is slightly superior to that of anodic oxidation

Keywords

II-VI semiconductors; X-ray photoelectron spectra; cadmium compounds; mercury compounds; oxidation; passivation; photochemistry; photodetectors; surface chemistry; HgCdTe; X-ray photoelectron spectroscopy; XPS; n-type mercury cadmium tellurium; n-type mercury cadmium tellurium photoconductance detectors; oxidation reaction; passivation mechanism; photochemical oxidation; surface passivation; Cadmium; Detectors; Mercury (metals); Oxidation; Passivation; Photochemistry; Photoconductivity; Physics; Surface waves; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785972

Filename

785972