Title :
Study and mechanism analysis of photochemical oxidation for n-type mercury cadmium tellurium photoconductance detectors
Author :
Yan-Li, Shi ; Guang-Di, Shen ; Xing-Hui, Wu ; Wen-Qing, Feng ; Tie-Jin, Chen
Author_Institution :
Dept. of Electron. Eng., Beijing Polytech. Univ., China
Abstract :
Instead of anodization, photochemical oxidation is used to perform the surface passivation of n-type mercury cadmium tellurium (HgCdTe) photoconductance detectors for the first time. X-ray photoelectron spectroscopy (XPS) is used to analyze the influence of the oxidation condition on the oxidation reaction. The passivation mechanism of photochemical oxidation is also studied. Comparing of the performances of the two kinds of detectors with each other, which were prepared under the same technique conditions by the anodization and the photochemical oxidation respectively, it shows that the results of photochemical oxidation is slightly superior to that of anodic oxidation
Keywords :
II-VI semiconductors; X-ray photoelectron spectra; cadmium compounds; mercury compounds; oxidation; passivation; photochemistry; photodetectors; surface chemistry; HgCdTe; X-ray photoelectron spectroscopy; XPS; n-type mercury cadmium tellurium; n-type mercury cadmium tellurium photoconductance detectors; oxidation reaction; passivation mechanism; photochemical oxidation; surface passivation; Cadmium; Detectors; Mercury (metals); Oxidation; Passivation; Photochemistry; Photoconductivity; Physics; Surface waves; Tellurium;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785972
