Variable gain SiGe HBT amplifier with low noise figure

Author

Pascht, A. ; Kallfass, I. ; Obergfell, R. ; Berroth, M.

Author_Institution

Inst. for Electr. & Opt. Commun. Eng., Stuttgart Univ., Germany

fYear

2000

fDate

2000

Firstpage

20

Lastpage

25

Abstract

The advances in SiGe processing technology are increasing the transit frequency f_T of transistors. In combination with the small base resistance of SiGe devices, low noise transistors are available. This kind of device can be used to design low noise amplifiers in the low GHz range for mobile communication products. Power fluctuations in mobile networks require low noise amplifiers with variable gain. This paper presents a low noise amplifier with variable gain using SiGe technology at f=900 MHz. The gain is V=18.4 dB at f=900 MHz with a noise figure of F₅₀=2.2 at 50 Ohm respectively. The attenuation is cascaded in three stages with an attenuation of a=3 dB per stage

Keywords

Ge-Si alloys; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; bipolar analogue integrated circuits; gain control; heterojunction bipolar transistors; integrated circuit noise; semiconductor materials; 18.4 dB; 2.2 dB; 900 MHz; LNA design; RFIC; SiGe; SiGe HBT amplifier; base resistance; low GHz range; low noise amplifiers; low noise figure; low noise transistors; mobile communication products; transit frequency; variable gain amplifier; Attenuation; Fluctuations; Frequency; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Mobile communication; Noise figure; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on

Conference_Location

Glasgow

Print_ISBN

0-7803-6550-X

Type

conf

DOI

10.1109/EDMO.2000.919021

Filename

919021