Si/SiGe IC´s with low cost in the 15 to 20 GHz range

Author

Teppo, T. ; Sönmez, E. ; Schad, K.-B. ; Abele, P. ; Schumacher, H.

Author_Institution

Dept. of Electron. devices & Circuits, Ulm Univ., Germany

fYear

2000

fDate

2000

Firstpage

26

Lastpage

31

Abstract

Today silicon germanium heterojunction bipolar transistor (SiGe HBT) technology is frequently used commercially in the S- and C-bands. It is convenient for low- and medium-power applications where considerable integration density and low power consumption are needed. The low cost and high maturity of the silicon process which the Si-SiGe HBT process is based on makes it an attractive choice for higher frequencies also. We demonstrate that with small changes of the standard process, IC operation up to 20 GHz is achievable. A low noise amplifier, a compact oscillator and a low power mixer are described in more detail

Keywords

Ge-Si alloys; MMIC amplifiers; MMIC mixers; MMIC oscillators; bipolar MMIC; elemental semiconductors; heterojunction bipolar transistors; integrated circuit noise; low-power electronics; semiconductor materials; silicon; 15 to 20 GHz; LNA; Si-SiGe; Si/SiGe HBT process; Si/SiGe ICs; SiGe HBT technology; compact oscillator; heterojunction bipolar transistor; low noise amplifier; low power mixer; Circuits; Costs; Doping; Fingers; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Silicon germanium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on

Conference_Location

Glasgow

Print_ISBN

0-7803-6550-X

Type

conf

DOI

10.1109/EDMO.2000.919022

Filename

919022