The influence of interface states on the characteristics of HEMT DC output

Author

Zhang, Xinghong ; Xia, Guanqun ; Xu, Yuansen ; Yang, Yufen ; Wang, Zhanguo

Author_Institution

Inst. of Metall., Acad. Sinica, Shanghai, China

fYear

1998

fDate

1998

Firstpage

664

Lastpage

667

Abstract

The influence of interface states on the characteristics of AlGaAs/GaAs high electron mobility transistor (HEMT) direct current (DC) output has been quantitatively analyzed in the first time using an analytical model of HEMT DC output. Considering the action of the interface states in a AlGaAs/GaAs heterostructure, we have analyzed in detail the effect of interface states on I-V characteristics and transconductance of HEMT. Our calculated results show that the control capability of the gate voltage on the channel current reduces with increasing density of interface states, the transconductance of device decreases. Hence, the existence of the interface states degrades the performance of HEMT

Keywords

III-V semiconductors; aluminium compounds; electronic density of states; gallium arsenide; high electron mobility transistors; interface states; semiconductor device models; AlGaAs-GaAs; DC output; HEMT; I-V characteristics; channel current; density of interface states; gate voltage; interface states; transconductance; Analytical models; Electron mobility; Gallium arsenide; HEMTs; Heterojunctions; Interface states; MODFETs; Semiconductor materials; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785977

Filename

785977