Title :
Technique and instrument for the characterization of deep traps in GaAs MESFET structures
Author :
Gorev, N.B. ; Kodzespirova, I.F. ; Kostylev, S.A. ; Kovalenko, Yu.A. ; Prokhorov, E.F.
Author_Institution :
Inst. of Tech. Mech., Acad. of Sci., Ukraine
Abstract :
The effective concentration of vacant deep traps in the buffer layer and substrate of a GaAs MESFET structure governs the overall effect of these traps on the MESFET performance. The onset of emptying of the deep traps at the layer-layer interfaces is responsible for the rising portion of the low-frequency capacitance-voltage characteristic. A low-frequency capacitance-voltage technique, which uses this effect for the determination of the effective concentration of vacant deep traps, is presented together with an instrument to realize it
Keywords :
III-V semiconductors; Schottky gate field effect transistors; deep levels; electron traps; gallium arsenide; GaAs; MESFET structure; buffer layer; deep traps; low-frequency capacitance-voltage characteristic; trap concentration; Buffer layers; Capacitance; Capacitance-voltage characteristics; Conductive films; Frequency; Gallium arsenide; Instruments; MESFETs; Substrates; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785978
