• DocumentCode
    3066032
  • Title

    A 28 GHz HPT/HBT monolithically integrated photoreceiver for hybrid fibre radio distribution systems

  • Author

    Gonzalez, C. ; Muller, M. ; Benchimol, J.L. ; Riet, M. ; Jaffré, P. ; Legaud, P.

  • Author_Institution
    OPTO, Marcoussis, France
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    55
  • Lastpage
    60
  • Abstract
    High-speed, long-wavelength InP/InGaAs MMIC photoreceiver based on an HPT/HBT shared layer integration scheme has been designed, fabricated and characterised. The performance of individual devices and integrated circuit was investigated through detailed CAD-based analysis and characterisation. The bipolar heterojunction phototransistor (HPT), with the same HBT layer structure, exhibited a DC responsivity of 0.25 A/W and an optical gain cut-off frequency of 70 GHz at λ=1550 nm. The fabricated two stage cascode narrow band amplifier with an HPT and three HBT´s demonstrated a transimpedance gain of 50 dBΩ and a -3 dB bandwidth of 4 GHz at the frequency of 28 GHz. A system evaluation of the MMIC photoreceiver was also realised using a subcarrier at 27.875 GHz modulated with a 25 Mb/s 16 QAM signal, and a BER of 10-9 for a C/N of 24.3 dB was achieved
  • Keywords
    III-V semiconductors; MMIC; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave photonics; optical fibre communication; optical receivers; phototransistors; 1550 nm; 25 Mbit/s; 28 GHz; 4 GHz; CAD; DC responsivity; HPT/HBT monolithic integration; InP-InGaAs; InP/InGaAs MMIC photoreceiver; QAM signal; bandwidth; heterojunction bipolar transistor; heterojunction phototransistor; hybrid fibre radio distribution system; optical gain cut-off frequency; subcarrier modulation; transimpedance gain; two-stage cascode narrow-band amplifier; Cutoff frequency; Heterojunction bipolar transistors; High speed optical techniques; Indium gallium arsenide; Indium phosphide; MMICs; Narrowband; Performance analysis; Phototransistors; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
  • Conference_Location
    Glasgow
  • Print_ISBN
    0-7803-6550-X
  • Type

    conf

  • DOI
    10.1109/EDMO.2000.919029
  • Filename
    919029