Title :
Suppression of instabilities in 4H-SiC microwave MESFETs
Author :
Hilton, K.P. ; Uren, M.J. ; Hayes, D.G. ; Wilding, P.J. ; Smith, B.H.
Author_Institution :
Defence Evaluation & Res. Agency, Great Malvern, UK
Abstract :
SiC MESFETs can be susceptible to trapping induced instabilities which reduce the performance of the device at CW compared to pulsed operation. We show that surface passivation and the use of a gate recess can dramatically reduce the scale of the problem
Keywords :
Schottky gate field effect transistors; microwave field effect transistors; passivation; silicon compounds; stability; wide band gap semiconductors; 4H-SiC microwave MESFETs; SiC; gate recess; instabilities suppression; surface passivation; trapping induced instabilities; Dispersion; MESFETs; MOSFETs; Microwave devices; Oxidation; Passivation; Pulse measurements; Radio frequency; Silicon carbide; Substrates;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
Conference_Location :
Glasgow
Print_ISBN :
0-7803-6550-X
DOI :
10.1109/EDMO.2000.919031
