Title :
GaN/AlGaN HFETs fabricated on a SiC substrate
Author :
Uren, M.J. ; Martin, T. ; Birbeck, J.C. ; Balmer, R. ; Hughes, B.T. ; Guest, J.J. ; Hydes, A.J. ; Willis, H. ; Jelfs, T.
Author_Institution :
Defence Evaluation & Res. Agency, Great Malvern, UK
Abstract :
Self-heating in GaN/AlGaN HFETs fabricated on sapphire and silicon carbide substrates has been compared. Pulse I-V measurements showed that the thermal resistance of devices on SiC substrates was about 5 lower than for sapphire. This demonstrates the need for SiC substrates to dissipate the enormous power density in these devices
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; junction gate field effect transistors; microwave field effect transistors; microwave power transistors; power field effect transistors; thermal resistance; wide band gap semiconductors; Al2O3; GaN-AlGaN; GaN/AlGaN HFET; SiC; fabrication; microwave power transistor; power dissipation; pulse I-V characteristics; sapphire substrate; self-heating; silicon carbide substrate; thermal resistance; Aluminum gallium nitride; Epitaxial layers; Gallium nitride; HEMTs; MODFETs; Pulse measurements; Silicon carbide; Substrates; Thermal conductivity; Thermal resistance;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
Conference_Location :
Glasgow
Print_ISBN :
0-7803-6550-X
DOI :
10.1109/EDMO.2000.919032
