Title :
Surface carrier recombination of optically excited silicon studied by terahertz time-domain spectroscopy
Author :
Salek, Khandoker Abu ; Kawayama, Iwao ; Murakami, H. ; Tonouchi, Masayoshi
Author_Institution :
Inst. of Laser Eng., Osaka Univ., Suita, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
We investigate surface recombination of photoexcited carriers at silicon surface by terahertz time-domain spectroscopy (THz-TDS). The surface is illuminated at 365 nm UV laser, and evaluates the surface recombination velocity (SRV). The values of SRV observed on silicon surface strongly reduce under illumination.
Keywords :
elemental semiconductors; photoexcitation; silicon; surface recombination; terahertz spectroscopy; terahertz wave spectra; SRV; Si; THz-TDS; optically excited silicon; photoexcited carriers; surface carrier recombination; surface recombination velocity; terahertz time-domain spectroscopy; Conductivity; Lighting; Optical surface waves; Radiative recombination; Silicon; Surface emitting lasers; Surface treatment;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600526
