Title :
Performance enhancement in deep-submicron poly-SiGe-gated CMOS devices
Author :
Lee, Wen-Chin ; King, Tsu-Jae ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Poly-SiGe- and poly-Si-gated N/PMOS devices with physical channel lengths down to 0.1 μm and gate oxide thicknesses down to 25 Å were fabricated. Device performance and reliability were characterized. The poly SiGe-gated NMOS and PMOS devices provide superior current drive due to less gate-depletion effect and higher inversion hole mobility in poly-SiGe-gated devices. In addition, gate oxide integrity in poly-SiGe-gated MOSFET is as good as poly-Si-gated device. Poly-SiGe-gated PMOSFET has better reliability than poly-Si-gated PMOSFET due to reduction of boron penetration
Keywords :
Ge-Si alloys; MOSFET; hole mobility; semiconductor device reliability; semiconductor materials; 0.1 micron; NMOS device; PMOS device; Si; SiGe; boron penetration; current drive; deep-submicron CMOS device; gate depletion effect; gate oxide integrity; inversion hole mobility; poly-Si gate; poly-SiGe gate; reliability; Annealing; Boron; CMOS technology; Computer science; Doping; Implants; MOS devices; MOSFET circuits; Plasma temperature; Resists;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1999. International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-5620-9
DOI :
10.1109/VTSA.1999.785988
