DocumentCode :
3066151
Title :
Very high volume production of GaAs MMICs
Author :
Snowden, C.M. ; Cameron, N.I.
fYear :
2000
fDate :
2000
Firstpage :
82
Lastpage :
84
Abstract :
The increase in demand for performance semiconductor devices supply the mobile communications market has led to dramatic developments in the compound semiconductor business, with the launch of a number of 6" GaAs foundries. The background to the demand for very high volumes of RF products for this market is discussed, together with the prospects for future growth. The recent establishment of a very large 6" GaAs facility by Filtronic plc in the UK is described together with the technical and economic considerations that will lead to a capacity of up to 175,000 wafers/annum
Keywords :
III-V semiconductors; MMIC; gallium arsenide; integrated circuit manufacture; 6 in; Filtronic; GaAs; GaAs MMIC; RF product; compound semiconductor device; fabrication facility; mobile communications market; volume production; wafer foundry; Business communication; Cellular phones; Economic forecasting; Gallium arsenide; MMICs; Mobile communication; PHEMTs; Production; Radio frequency; Telephone sets;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
Conference_Location :
Glasgow
Print_ISBN :
0-7803-6550-X
Type :
conf
DOI :
10.1109/EDMO.2000.919034
Filename :
919034
Link To Document :
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