DocumentCode :
3066164
Title :
Ultra-broadband nonlinear PHEMT modelling using TOPASTM
Author :
McPherson, D.S. ; Elgaid, K. ; Thayne, I.G. ; Robertson, I.D. ; Lucyszyn, S.
Author_Institution :
Dept. of Electron. Eng., Surrey Univ., Guildford, UK
fYear :
2000
fDate :
2000
Firstpage :
85
Lastpage :
88
Abstract :
This paper presents the use of a nonlinear TOPASTM model to describe the behaviour of an AlGaAs/InGaAs/GaAs PHEMT device. The extracted model features excellent agreement at DC and for small-signal excitation up to 120 GHz. The model is implemented by the IMST for Agilent EDA´s Series IVTM and ADSTM circuit simulators
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; 120 GHz; AlGaAs-InGaAs-GaAs; AlGaAs/InGaAs/GaAs PHEMT; DC characteristics; Series ADS; Series IV; TOPAS; circuit simulator; parameter extraction; small-signal excitation; ultra-broadband nonlinear model; Analytical models; Circuit simulation; Electronic design automation and methodology; Feature extraction; Gallium arsenide; MMICs; Nanoelectronics; Nonlinear circuits; PHEMTs; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
Conference_Location :
Glasgow
Print_ISBN :
0-7803-6550-X
Type :
conf
DOI :
10.1109/EDMO.2000.919035
Filename :
919035
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3066164
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