Title :
Metamorphic InAlAs/InGaAs HEMT´s on GaAs substrates using an InP buffer layer
Author :
Schmidt, R. ; Tönnesmann, A. ; Förster, A. ; Grimm, M. ; Kordos, P. ; Lüth, H.
Author_Institution :
Res. Centre Julich, Inst. of Thin Film & Ion Technol., Germany
Abstract :
An AlInAs/InGaAs metamorphic high electron mobility transistor (MM-HEMT) with a pseudomorphic InGaAs channel has been developed on GaAs substrate via an InP buffer layer. The as grown InP layer on GaAs exhibits state of the art structural and electrical properties. The full width at half maximum (FWHM) of the X-ray rocking curve is as small as 370 arcsec. A 0.33 μm gate length device fabricated on such an InP/GaAs heterostructure exhibits a current gain cut-off frequency fT of 65 GHz and a maximum frequency of oscillation of 105 GHz, both measured at Vds=1.75 V and Vgs=-0.8 V. Further improvement of the device performance by the introduction of strained layer superlattices (SLS) seems possible and will be discussed
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; 0.33 micron; 105 GHz; 65 GHz; GaAs; GaAs substrate; InAlAs-InGaAs; InAlAs/InGaAs metamorphic HEMT; InP; InP buffer layer; X-ray rocking curve; current gain cut-off frequency; electrical properties; gate length; maximum frequency of oscillation; pseudomorphic channel; strained layer superlattice; structural properties; Buffer layers; Current measurement; Cutoff frequency; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Performance gain;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
Conference_Location :
Glasgow
Print_ISBN :
0-7803-6550-X
DOI :
10.1109/EDMO.2000.919037
