Title :
On the impact of indium and boron on the Reversed Narrow-Channel Effect (RNCE) in BULK and SOI MOSFETs
Author :
Van Meer, Hans ; Lyu, Jeongho ; Kubicek, Stefan ; De Meyer, K.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
For the first time, experimental results are presented on the Reverse Narrow-Channel Effect (RNCE) in SOI and bulk MOSFETs using indium as a channel dopant. The presented results show that devices with an indium channel exhibit the same RNCE as devices with a boron channel, which refers to the same diffusion mechanisms in deep submicron devices
Keywords :
MOSFET; boron; diffusion; indium; semiconductor doping; silicon-on-insulator; SOI MOSFET; Si:B; Si:In; boron dopant; bulk MOSFET; deep submicron device; diffusion; indium dopant; reversed narrow channel effect; Boron; CMOS process; CMOS technology; Fabrication; Indium; MOSFETs; Power dissipation; Rapid thermal processing; Silicon; Threshold voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1999. International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-5620-9
DOI :
10.1109/VTSA.1999.785992
