• DocumentCode
    3066240
  • Title

    Design of a 50 Gbit/s InP/InGaAs HBT master-slave D-type flip-flop

  • Author

    Kasbari, A. ; André, Ph ; Blayac, S. ; Riet, M. ; Konczykowska, A. ; Ouslimani, H. ; Godin, J.

  • Author_Institution
    Groupement d´´Interet Econ., OPTO+, Marcoussis, France
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    105
  • Lastpage
    110
  • Abstract
    The design of a 50 Gbit/s master-slave D-type flip-flop for ETDM transmission system is presented. The chip is fabricated in an InP/InGaAs DHBT self-aligned technology with typical Ft and Fmax of about 160 GHz and 210 GHz respectively. We show how our design benefits at best from the available technology. The switching of the transistors is optimised as well as the sizing of basic blocks like emitter-followers or current switches. At this operating frequency, the layout step imposes to take into account propagation phenomena and interconnection parasitic elements, which necessarily degrade the performances. Appropriate methods are systematically applied to evaluate and reduce these effects
  • Keywords
    III-V semiconductors; bipolar logic circuits; flip-flops; gallium arsenide; heterojunction bipolar transistors; indium compounds; time division multiplexing; 160 GHz; 210 GHz; 50 Gbit/s; ETDM transmission system; InP-InGaAs; InP/InGaAs DHBT master-slave D-type flip-flop; self-aligned technology; Circuits; DH-HEMTs; Degradation; Flip-flops; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Master-slave; Wavelength division multiplexing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
  • Conference_Location
    Glasgow
  • Print_ISBN
    0-7803-6550-X
  • Type

    conf

  • DOI
    10.1109/EDMO.2000.919041
  • Filename
    919041