DocumentCode :
3066240
Title :
Design of a 50 Gbit/s InP/InGaAs HBT master-slave D-type flip-flop
Author :
Kasbari, A. ; André, Ph ; Blayac, S. ; Riet, M. ; Konczykowska, A. ; Ouslimani, H. ; Godin, J.
Author_Institution :
Groupement d´´Interet Econ., OPTO+, Marcoussis, France
fYear :
2000
fDate :
2000
Firstpage :
105
Lastpage :
110
Abstract :
The design of a 50 Gbit/s master-slave D-type flip-flop for ETDM transmission system is presented. The chip is fabricated in an InP/InGaAs DHBT self-aligned technology with typical Ft and Fmax of about 160 GHz and 210 GHz respectively. We show how our design benefits at best from the available technology. The switching of the transistors is optimised as well as the sizing of basic blocks like emitter-followers or current switches. At this operating frequency, the layout step imposes to take into account propagation phenomena and interconnection parasitic elements, which necessarily degrade the performances. Appropriate methods are systematically applied to evaluate and reduce these effects
Keywords :
III-V semiconductors; bipolar logic circuits; flip-flops; gallium arsenide; heterojunction bipolar transistors; indium compounds; time division multiplexing; 160 GHz; 210 GHz; 50 Gbit/s; ETDM transmission system; InP-InGaAs; InP/InGaAs DHBT master-slave D-type flip-flop; self-aligned technology; Circuits; DH-HEMTs; Degradation; Flip-flops; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Master-slave; Wavelength division multiplexing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
Conference_Location :
Glasgow
Print_ISBN :
0-7803-6550-X
Type :
conf
DOI :
10.1109/EDMO.2000.919041
Filename :
919041
Link To Document :
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