Optical absorption coefficient determination and physical modelling of strained SiGe/Si photodetectors

Author

Polleux, J.L. ; Rumelhard, C.

Author_Institution

Lab. Phys. des Composants Electron., CNAM, Paris, France

fYear

2000

fDate

2000

Firstpage

167

Lastpage

172

Abstract

A physical model of the absorption in strained-SiGe on Si layers based on the one-photon MacFarlane model is investigated. Temperature variations are included as well as germanium context effect on parameters of the model. Results are compared to existing data and then are injected in a numerical-simulation-software. First optical simulations on strained SiGe photodiode are therefore performed which open the way to better understanding and optimisations of SiGe-based optoelectronic devices

Keywords

Ge-Si alloys; elemental semiconductors; optical receivers; photodetectors; photodiodes; semiconductor device models; semiconductor materials; silicon; SiGe-Si; germanium context effect; numerical-simulation-software; one-photon MacFarlane model; optical absorption coefficient determination; photodetectors; photodiode; physical modelling; temperature variation; Absorption; Equations; Germanium silicon alloys; Optical fiber LAN; Phonons; Photodetectors; Photonic integrated circuits; Silicon alloys; Silicon germanium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on

Conference_Location

Glasgow

Print_ISBN

0-7803-6550-X

Type

conf

DOI

10.1109/EDMO.2000.919052

Filename

919052