Title :
Optical absorption coefficient determination and physical modelling of strained SiGe/Si photodetectors
Author :
Polleux, J.L. ; Rumelhard, C.
Author_Institution :
Lab. Phys. des Composants Electron., CNAM, Paris, France
Abstract :
A physical model of the absorption in strained-SiGe on Si layers based on the one-photon MacFarlane model is investigated. Temperature variations are included as well as germanium context effect on parameters of the model. Results are compared to existing data and then are injected in a numerical-simulation-software. First optical simulations on strained SiGe photodiode are therefore performed which open the way to better understanding and optimisations of SiGe-based optoelectronic devices
Keywords :
Ge-Si alloys; elemental semiconductors; optical receivers; photodetectors; photodiodes; semiconductor device models; semiconductor materials; silicon; SiGe-Si; germanium context effect; numerical-simulation-software; one-photon MacFarlane model; optical absorption coefficient determination; photodetectors; photodiode; physical modelling; temperature variation; Absorption; Equations; Germanium silicon alloys; Optical fiber LAN; Phonons; Photodetectors; Photonic integrated circuits; Silicon alloys; Silicon germanium; Temperature;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
Conference_Location :
Glasgow
Print_ISBN :
0-7803-6550-X
DOI :
10.1109/EDMO.2000.919052
