Title :
Enhanced hot-hole degradation in P+-poly PMOSFETs with oxynitride gate dielectrics
Author :
Chen, Y.Y. ; Gardner, M. ; Fulford, J. ; Wristers, D. ; Joshi, A.B. ; Chung, L. ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
A significant degradation under hot-hole injection is observed in P+-poly PMOSFETs with oxynitride gate dielectrics. Both oxynitrides formed by gate oxide grown on Nitrogen Implanted Si Substrates (NISS) and NO-annealed SiO2 oxynitride gate dielectrics are used and compared to control SiO2 gate dielectrics of identical thicknesses. A physical model responsible for such enhanced degradation in PMOSFETs with oxynitride gate dielectric is proposed. It is shown that the hole injection barrier lowering as a result of the nitrogen-rich layer at the SiO2/Si interface in oxynitride is responsible for such enhanced degradation
Keywords :
MOSFET; charge injection; dielectric thin films; hot carriers; semiconductor device models; semiconductor device reliability; semiconductor device testing; N implanted Si substrates; NO; NO-annealed SiO2 oxynitride gate dielectrics; P+-poly PMOSFETs; Si:N; SiO2-Si; SiO2/Si interface; enhanced hot-hole degradation; hole injection barrier lowering; hot-hole injection; oxynitride gate dielectrics; physical model; twin-well CMOS process; Boron; Degradation; Dielectric devices; Hot carriers; MOSFET circuits; Microelectronics; Nitrogen; Rapid thermal annealing; Stress control; Thickness control;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1999. International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-5620-9
DOI :
10.1109/VTSA.1999.786006
