• DocumentCode
    3066500
  • Title

    Improved method for lateral profiling of interface traps and oxide charge in MOSFET devices

  • Author

    Melik-Martirosian, Ashot ; Ma, T.P.

  • Author_Institution
    Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    90
  • Lastpage
    93
  • Abstract
    An improved oxide-charge and interface-trap lateral profiling charge pumping technique is proposed. Erase-induced oxide charge and interface traps are investigated in Flash EPROM devices. It is shown that the improved technique allows the extraction of profiles in cases where the previous method does not yield satisfactory results
  • Keywords
    MOSFET; doping profiles; flash memories; hot carriers; interface states; semiconductor device measurement; semiconductor device reliability; MOS device reliability; MOSFET devices; doping profile; erase-induced oxide charge; flash EPROM devices; hot carrier effects; interface traps; lateral profiling; lateral profiling charge pumping technique; oxide charge; Charge measurement; Charge pumps; Current measurement; Electron traps; Hot carriers; MOSFET circuits; Microelectronics; Pulse measurements; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 1999. International Symposium on
  • Conference_Location
    Taipei
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-5620-9
  • Type

    conf

  • DOI
    10.1109/VTSA.1999.786007
  • Filename
    786007
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3066500