Title :
Modeling and correlation of gate oxide QBD between exponential current ramp and constant current stresses
Author :
Liu, Chuan H. ; Cheng, Tun-Jen ; Wang, Mu-Chun ; Yang, S.H. ; Fu, K.Y.
Author_Institution :
United Microelectron. Corp., Hsin-Chu, Taiwan
Abstract :
A simple model and conversion scheme is proposed to correlate Q BD measured through exponential current ramp stress (ECR) and constant current stress (CCS). Although QBD measured via ECR depends on holding time (a power-law dependence) and so does CCS on current density (also a power-law dependence), results from either test at any stress condition can be easily converted to the other with stress condition specified. Experiments with 35 Å to 135 Å oxides demonstrate the capability of the proposed method
Keywords :
charge injection; current density; dielectric thin films; electric breakdown; impact ionisation; oxidation; semiconductor process modelling; 35 to 135 angstrom; constant current stresses; correlation; current density; exponential current ramp stress; gate oxide QBD; gate oxide charge-to-breakdown; holding time; impact ionization; model; negative gate injection; oxide thickness; positive gate injection; power-law dependence; Carbon capture and storage; Current density; Delay effects; Design for quality; Size measurement; Stress measurement; Testing;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1999. International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-5620-9
DOI :
10.1109/VTSA.1999.786008
