Title :
Electro-thermal modelling of microwave transistors and MMICs for optimised transient and steady-state performance
Author :
David, Stephane ; Batty, William ; Panks, Andrew J ; Johnson, Robert G. ; Snowden, Christopher M.
Author_Institution :
Inst. of Microwaves & Photonics, Leeds Univ., UK
Abstract :
The influence of the physical layout of MESFET-based MMICs, on active device temperature and I-V characteristics, is investigated. These transient and steady state simulations represent the first reported, fully physical, coupled electro-thermal studies on CAD timescales. Calculated temperature rises are compared against experimental results obtained by thermal imaging
Keywords :
MESFET integrated circuits; Schottky gate field effect transistors; field effect MMIC; high electron mobility transistors; integrated circuit layout; integrated circuit modelling; microwave field effect transistors; semiconductor device models; CAD; HEMT; I-V characteristics; MESFET; MMIC layout; active device; design optimisation; electrothermal model; microwave transistor; steady-state simulation; temperature distribution; thermal imaging; transient simulation; Coupling circuits; Electric resistance; Immune system; MESFETs; MMICs; Microwave transistors; Steady-state; Surface resistance; Temperature; Thermal resistance;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
Conference_Location :
Glasgow
Print_ISBN :
0-7803-6550-X
DOI :
10.1109/EDMO.2000.919060
