Electro-thermal modelling of microwave transistors and MMICs for optimised transient and steady-state performance

Author

David, Stephane ; Batty, William ; Panks, Andrew J ; Johnson, Robert G. ; Snowden, Christopher M.

Author_Institution

Inst. of Microwaves & Photonics, Leeds Univ., UK

fYear

2000

fDate

2000

Firstpage

206

Lastpage

211

Abstract

The influence of the physical layout of MESFET-based MMICs, on active device temperature and I-V characteristics, is investigated. These transient and steady state simulations represent the first reported, fully physical, coupled electro-thermal studies on CAD timescales. Calculated temperature rises are compared against experimental results obtained by thermal imaging

Keywords

MESFET integrated circuits; Schottky gate field effect transistors; field effect MMIC; high electron mobility transistors; integrated circuit layout; integrated circuit modelling; microwave field effect transistors; semiconductor device models; CAD; HEMT; I-V characteristics; MESFET; MMIC layout; active device; design optimisation; electrothermal model; microwave transistor; steady-state simulation; temperature distribution; thermal imaging; transient simulation; Coupling circuits; Electric resistance; Immune system; MESFETs; MMICs; Microwave transistors; Steady-state; Surface resistance; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on

Conference_Location

Glasgow

Print_ISBN

0-7803-6550-X

Type

conf

DOI

10.1109/EDMO.2000.919060

Filename

919060