DocumentCode
3066588
Title
On the use of Fowler-Nordheim stress to reveal plasma-charging damage
Author
Cheung, Kin P.
Author_Institution
AT&T Bell Laboratories
fYear
1996
fDate
14-14 May 1996
Firstpage
11
Lastpage
14
Keywords
Annealing; Antenna measurements; Charge carrier processes; Electron traps; Interface states; Plasma devices; Plasma measurements; Plasma temperature; Stress measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 1996 1st International Symposium on
Conference_Location
Santa Clara, CA, USA
Print_ISBN
0-9651577-0-9
Type
conf
DOI
10.1109/PPID.1996.715192
Filename
715192
Link To Document