• DocumentCode
    3066609
  • Title

    Modelling and simulation of AlxGa1-xAs/GaAs HBTs using the finite element method

  • Author

    Garcia-Loureiro, Antonio J. ; Pena, Tomas F. ; Lopez-Gonzalez, J.M. ; Vinas, Lluis Prat

  • Author_Institution
    Dept. de Electron. y Comput., Santiago de Compostela Univ., Spain
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    218
  • Lastpage
    223
  • Abstract
    In this paper we present the modelling and simulation of Alx Ga1-xAs/GaAs gradual heterojunction bipolar transistors (HBTs). Using this model, we have implemented a parallel three-dimensional semiconductor device simulator which have been used in the simulation. This simulator is based on drift-diffusion transport model. Fermi-Dirac statistics is considered in our model, and a compact formulation is used that makes it easy to take into account other effects such as the non-parabolic nature of the bands or the presence of various subbands in the conduction process. The Poisson equation and continuity equations were discretized using a finite element method (FEM) on an unstructured tetrahedral mesh. This code has been implemented for distributed memory multicomputers, making use of the MPI message passing standard library. We have shown the results of the simulation of an AlxGa1-xAs/GaAs device
  • Keywords
    III-V semiconductors; Poisson equation; aluminium compounds; finite element analysis; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; AlxGa1-xAs/GaAs gradual heterojunction bipolar transistor; AlGaAs-GaAs; Fermi-Dirac statistics; MPI message passing standard library; Poisson equation; continuity equation; distributed memory multicomputer; drift-diffusion transport model; finite element method; nonparabolic band structure; numerical discretization; parallel three-dimensional semiconductor device simulation; subband conduction; tetrahedral mesh; Charge carrier processes; Circuit simulation; Computational modeling; Finite element methods; Gallium arsenide; Heterojunction bipolar transistors; Poisson equations; Semiconductor devices; Semiconductor materials; Stationary state;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
  • Conference_Location
    Glasgow
  • Print_ISBN
    0-7803-6550-X
  • Type

    conf

  • DOI
    10.1109/EDMO.2000.919062
  • Filename
    919062
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3066609