New method to determine the HBT´s capacitances using multi-bias S-parameter measurements

Author

Ouslimani, A. ; Hafdallah, H. ; Gaubert, J. ; Medjnoun, M. ; Pouvil, P.

Author_Institution

Ecole Nat. de l´´Electron. et de ses Appl., Cergy-Pontoise, France

fYear

2000

fDate

2000

Firstpage

259

Lastpage

264

Abstract

A new method to determine the base-emitter and the intrinsic and extrinsic base-collector capacitances is proposed. It uses nonlinear equations obtained from a combination of six coefficients of polynomial functions named “expression blocks”. The polynomial function are derived from suitable organisation of combined Z-parameter analytical expressions of the small-signal HBT equivalent circuit. The value of each “expression blocks"” is extracted in the adequate frequency range from S-parameter measurements. The method is validated treating HBTs at multi-bias conditions

Keywords

S-parameters; capacitance measurement; equivalent circuits; heterojunction bipolar transistors; polynomials; semiconductor device measurement; semiconductor device models; HBT; Z-parameter; equivalent circuit; expression block; multi-bias S-parameter measurement; nonlinear capacitance; parameter extraction; polynomial function; small-signal model; Capacitance measurement; Design optimization; Equations; Equivalent circuits; Heterojunction bipolar transistors; Microwave circuits; Microwave theory and techniques; Polynomials; Scattering parameters; Signal design;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on

Conference_Location

Glasgow

Print_ISBN

0-7803-6550-X

Type

conf

DOI

10.1109/EDMO.2000.919070

Filename

919070