A novel UV baking process to improve DUV photoresist hardness

Author

Hunag, C.S. ; Tsui, B.Y. ; Shieh, H.H. ; Mohondro, Robert

Author_Institution

Etching & Process Integration Dept., ERSO/ITRI, Hisnchu, Taiwan

fYear

1999

fDate

1999

Firstpage

135

Lastpage

138

Abstract

A new baking gas using a mixture of NH₃ and N₂ gases can effectively reduce the photoresist thickness shrinkage, CD variation and footing during the UV-bake DUV photoresist hardening process has been developed. After this UV baking process, a higher etch selectivity to photoresist and better CD control and profile processing can be achieved in high density plasma (HDP) dry etchers for applications to 0.2 μm contact holes with aspect-ratio greater than 5 and 0.22 μm aluminum metal lines with aspect-ratio of 2.5

Keywords

ammonia; gas mixtures; integrated circuit metallisation; nitrogen; photochemistry; photoresists; radiation hardening; sputter etching; ultraviolet lithography; 0.2 mum; 0.22 mum; 248 nm; Al; Al metal lines; CD control; CD variation; DUV photoresist hardness; NH₃-N₂; NH₃-N₂ gas mixture; UV baking process; aspect-ratio; baking gas; chemically amplified resists; contact holes; high density plasma dry etchers; photoresist etch selectivity; photoresist thickness shrinkage; Aluminum; Dry etching; Gases; Plasma applications; Plasma density; Plasma devices; Process control; Resists; Thickness measurement; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1999. International Symposium on

Conference_Location

Taipei

ISSN

1524-766X

Print_ISBN

0-7803-5620-9

Type

conf

DOI

10.1109/VTSA.1999.786019

Filename

786019