Title :
Electrical stress characteristics of MOS capacitors with p-type poly-SiGe and poly-Si gates in the direct tunneling regime
Author :
Yousif, M.Y.A. ; Willander, M. ; Lundgren, P. ; Caymax, M.
Author_Institution :
Dept. of Phys., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
A systematic experimental study on the electrical stress characteristics of MOS capacitors incorporating in-situ B-doped P+ poly-Si1-xGex material and ultra-thin NO-grown SiO2 dielectric (3.0 nm) is presented. Devices with poly-SiGe electrodes showed lower rate of increase in the current-time (I-t) characteristics and more stress tolerance regarding breakdown characteristics. This is consistent with B diffusion properties in both poly-Si and poly-SiGe and it supports the use of poly-SiGe as a promising gate electrode in MOS devices with improved performance
Keywords :
Ge-Si alloys; MOS capacitors; elemental semiconductors; semiconductor device breakdown; semiconductor materials; silicon; tunnelling; B dopant diffusion; MOS capacitor; NO growth; Si:B-SiO2; SiGe:B-SiO2; SiO2 ultrathin dielectric; breakdown characteristics; current-time characteristics; direct tunneling; electrical stress; p-type poly-Si gate; p-type poly-SiGe gate; CMOS technology; Dielectrics; Electrodes; MOS capacitors; MOS devices; Microelectronics; Silicon germanium; Stress; Tunneling; Voltage;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
Conference_Location :
Glasgow
Print_ISBN :
0-7803-6550-X
DOI :
10.1109/EDMO.2000.919072
