• DocumentCode
    3067038
  • Title

    A new programming technique for flash memory devices

  • Author

    Liu, Zhizheng ; Ma, T.P.

  • Author_Institution
    Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    195
  • Lastpage
    198
  • Abstract
    A new programming scheme for flash memory devices, designated pulse agitated substrate hot electron injection (PASHEI), is demonstrated, which can be readily implemented with current cell structures without modification. Detailed comparison between CHEI and PASHEI is reported. Using this technique, excellent endurance characteristics are obtained up to 100 k cycles
  • Keywords
    PLD programming; cellular arrays; flash memories; hot carriers; cell structures; endurance characteristics; flash memory devices; programming technique; pulse agitated substrate hot electron injection; Channel hot electron injection; Circuit synthesis; Electrodes; Electron emission; Flash memory; MOSFETs; Nonvolatile memory; Substrate hot electron injection; Voltage control; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 1999. International Symposium on
  • Conference_Location
    Taipei
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-5620-9
  • Type

    conf

  • DOI
    10.1109/VTSA.1999.786033
  • Filename
    786033
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3067038