Title :
A new programming technique for flash memory devices
Author :
Liu, Zhizheng ; Ma, T.P.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
A new programming scheme for flash memory devices, designated pulse agitated substrate hot electron injection (PASHEI), is demonstrated, which can be readily implemented with current cell structures without modification. Detailed comparison between CHEI and PASHEI is reported. Using this technique, excellent endurance characteristics are obtained up to 100 k cycles
Keywords :
PLD programming; cellular arrays; flash memories; hot carriers; cell structures; endurance characteristics; flash memory devices; programming technique; pulse agitated substrate hot electron injection; Channel hot electron injection; Circuit synthesis; Electrodes; Electron emission; Flash memory; MOSFETs; Nonvolatile memory; Substrate hot electron injection; Voltage control; Writing;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1999. International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-5620-9
DOI :
10.1109/VTSA.1999.786033
