A new self-convergent programming and erase tightening by substrate-hot-electron injection for ETOX cells in triple-well

Author

Chi, Min-Hwa ; Chen, Chih-Ming ; Hung, Chih-Wei ; Wang, Yu-Hsiung

Author_Institution

Technol. Dev. Center, Worldwide Semicond. Manuf. Cor., Hsinchu, Taiwan

fYear

1999

fDate

1999

Firstpage

199

Lastpage

202

Abstract

A new self-convergent programming technique for ETOX cells fabricated in a triple-well process is proposed using substrate hot-electron (SHE) injection. The programming efficiency is at least 100X higher than channel-hot-electron (CHE) injection. The cell threshold voltage (V_t) after programming saturates with self-convergence. The SHE re-programming can tighten the Vt spread after erase. The NOR array architecture is codified with individual p-wells for each column so that it is possible to implement single-bit program and erase operations. The ETOX cells in triple-well with the new NOR array can perform as a full EEPROM as well as a flash memory

Keywords

CMOS memory circuits; EPROM; NOR circuits; PLD programming; flash memories; hot carriers; 0.35 micron; EEPROM; ETOX cells; NOR array architecture; SHE injection; cell threshold voltage; flash memory; p-wells; programming efficiency; self-convergent programming; single-bit erase operations; single-bit program operations; substrate-hot-electron injection; triple-well CMOS process; Capacitors; Channel hot electron injection; EPROM; Flash memory; Flash memory cells; Nonvolatile memory; Semiconductor device manufacture; Substrates; Threshold voltage; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1999. International Symposium on

Conference_Location

Taipei

ISSN

1524-766X

Print_ISBN

0-7803-5620-9

Type

conf

DOI

10.1109/VTSA.1999.786034

Filename

786034