DocumentCode :
3067337
Title :
Wafer metrology based on combined optical interferometry
Author :
Kim, A. Young Gwang ; Seo, B. Yong Bum ; Joo, C. Ki-Nam
Author_Institution :
Dept. of Photonic Eng., Chosun Univ., Gwangju, South Korea
fYear :
2013
fDate :
June 30 2013-July 4 2013
Firstpage :
1
Lastpage :
2
Abstract :
In this presentation, we propose and verify a simple combined interferometer with low coherence scanning interferometry and spectrally-resolved interferometry using NIR SLD to measure both side surface and thickness profiles of a Si wafer at once.
Keywords :
elemental semiconductors; light interferometry; silicon; NIR SLD; Si; low coherence scanning interferometry; optical interferometry; side surface profile; silicon wafer metrology; spectrally-resolved interferometry; thickness profile; Cameras; Optical interferometry; Optical surface waves; Semiconductor device measurement; Silicon; Thickness measurement; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
Type :
conf
DOI :
10.1109/CLEOPR.2013.6600582
Filename :
6600582
Link To Document :
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