Title :
Edge FN stress induced leakage current in tunnel oxides
Author :
Zous, Nian-Kai ; Yeh, C.C. ; Tsai, C.W. ; Chiang, L.P. ; Wang, Tahui
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The mechanism and characteristics of edge FN stress induced leakage current (SILC) in tunnel oxides are investigated. The dominant SILC mechanism is found to be positive oxide charge assisted electron tunneling. A pronounced transient effect in edge FN SILC is observed. The transient effect arises from the fact that positive oxide charges, which help electrons tunnel through the oxide, can themselves escape to the Si substrate at a positive measurement field. The edge FN SILC can be significantly reduced by using a substrate hot electron injection technique
Keywords :
MOSFET; charge injection; flash memories; hot carriers; interface states; leakage currents; semiconductor device measurement; transient analysis; tunnelling; 300 to 400 K; Fowler-Nordheim stressing; SILC mechanism; Si; Si substrate; Si-SiO2; edge FN stress induced leakage current; flash EEPROM; nMOSFET; negative oxide charge detrapping; positive measurement field; positive oxide charge assisted electron tunneling; substrate hot electron injection technique; transient effect; tunnel oxides; Charge measurement; Current measurement; EPROM; Hot carriers; Leakage current; MOSFET circuits; Stress measurement; Substrate hot electron injection; Tunneling; Voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1999. International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-5620-9
DOI :
10.1109/VTSA.1999.786050
