Title :
The reliability of multilevel analog memory in a voice storage and playback system using source-side injection flash
Author :
Kordesch, Albert V. ; Awsare, Saleel ; Brennan, James, Jr. ; Guo, Ping ; Hemming, Mark ; Herman, Michael ; Holzmann, Peter ; Ng, Edward ; Liu, Chun-Mai ; Su, Ken ; Wang, Chih-Hsin ; Wu, Ming
Author_Institution :
Inf. Storage Devices, San Jose, CA, USA
Abstract :
The reliability of a multilevel analog memory is mainly determined by data retention, cycling endurance, and read and write disturb. This storage system retains a voice message for 10 years and can record continuously for 50 K cycles. It can tolerate up to 300 single cell retention shifts >50 mV and still meet THD<0.5% and SINAD>32 dB
Keywords :
CMOS analogue integrated circuits; CMOS memory circuits; analogue storage; flash memories; harmonic distortion; integrated circuit noise; integrated circuit reliability; voice equipment; CMOS; SINAD; THD; continuous recording; cycling endurance; data retention; dielectric integrity; disturb modes; flash based analog memory; multilevel analog memory; read/write disturb; reliability; single cell retention shifts; source-side injection flash; voice message; voice storage/playback system; Analog memory; Costs; Digital signal processing chips; EPROM; Mirrors; Nonvolatile memory; Read-write memory; Split gate flash memory cells; Voltage; Writing;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1999. International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-5620-9
DOI :
10.1109/VTSA.1999.786051
