GaAs MOSFETs using Ga2O3(Gd2O3) as gate dielectric

Growth of an oxide mixture, Ga₂O₃(Gd₂ O₃), in ultra-high vacuum, on clean and ordered GaAs(100) surface has produced atomically smooth oxide/GaAs interfaces with a low interfacial density of states. Both enhancement-mode p- and n-channel GaAs metal oxide semiconductor field effect transistors (MOSFETs) on GaAs semi-insulating substrates with inversion were demonstrated using this novel oxide as the gate dielectric and a conventional ion-implant technology. Depletion-mode GaAs MOSFETs with accumulation were also fabricated. The Ga₂O₃(Gd ₂O₃) films with thickness varying from 500 to 50 Å show a low leakage current density of 10^-9 A/cm² at low gate bias up to 2.5 V, and electrical breakdown fields of >10 MV/cm