Title :
Room-temperature continuous-wave lasing from InAs/GaAs quantum dot laser grown by molecular beam epitaxy
Author :
Gong, Q. ; Liang, J.B. ; Xu, B. ; Wang, Z.G.
Author_Institution :
Lab. of Semicond. Mater. Sci., Acad. Sinica, Beijing, China
Abstract :
Quantum dot lasers are predicted to have proved lasing characteristics compared to quantum well and quantum wire lasers. We report on quantum dot lasers with active media of vertically stacked InAs quantum dot layers grown by molecular beam epitaxy. The laser diodes were fabricated and the threshold current density of 220 A/cm2 was achieved at room temperature with lasing wavelength of 951 nm. The characteristic temperature T0 was measured to be 333 K and 157 K for the temperature ranges of 40-180 K and 180-300 K, respectively
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; 293 K; 40 to 300 K; 951 nm; InAs-GaAs; characteristic temperature; continuous-wave lasing; lasing wavelength; molecular beam epitaxy; quantum dot laser; threshold current density; Diode lasers; Gallium arsenide; Molecular beam epitaxial growth; Quantum dot lasers; Quantum dots; Quantum well lasers; Temperature distribution; Threshold current; Wavelength measurement; Wire;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786066
