Title :
GaAs/AlGaAs single quantum well laser with two pairs of linear GRIN-SCH
Author :
Guoying, Chen ; Zuguang, Ma ; Xingqiao, Wang
Author_Institution :
Hebei Univ. of Technol., Tianjin, China
Abstract :
High output power GaAs/AlGaAs single quantum well lasers with two pairs of GRIN have been fabricated by MOCVD. Wavelength ranges from 805 to 820 nm, threshold current is 130 mA at room temperature CW operation. 200 mw/facet and 0.5 W/facet for cw output optical power has been obtained under 480 mA and 970 mA operation respectively
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; gradient index optics; quantum well lasers; 805 to 820 nm; GaAs-AlGaAs; MOCVD; high output power laser; linear GRIN-SCH; single quantum well laser; threshold current; Diode lasers; Fiber lasers; Gallium arsenide; Gold; Laser modes; Power lasers; Pump lasers; Quantum well lasers; Solid lasers; Threshold current;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786067
