Title :
Strained InGaAs/AlGaAs double quantum well laser with GRIN-SCH
Author :
Guoying, Chen ; Zuguang, Ma ; Xingqiao, Wang
Author_Institution :
Hebei Univ. of Technol., Tianjin, China
Abstract :
Strained InGaAs/AlGaAs double quantum well lasers with two pairs of GRIN heterostructures have been fabricated by Metal-Organic Chemical Vapor Deposition (MOCVD). Its wavelength ranges from 970 to 982 nm, threshold current density is 140 A/cm2 at room temperature CW operation. 520 mw/facet and 1.49 w/facet for CW output optical power has been obtained under 0.9 A and 2.0 A operation, respectively. The maximum CW output optical power can come up to 2.4 w/facet
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; current density; gallium arsenide; gradient index optics; indium compounds; quantum well lasers; 293 K; 970 to 982 nm; CW output optical power; GRIN-SCH; InGaAs-AlGaAs; MOCVD; strained double quantum well laser; threshold current density; Artificial intelligence; Chemical lasers; Fiber lasers; Indium gallium arsenide; Optical buffering; Power lasers; Pump lasers; Quantum well lasers; Semiconductor lasers; Solid lasers;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786068
