Title :
Device physics, performance simulations and measured results of SOI MOS and DTMOS transistors and integrated circuits
Author :
Huang, C. ; Wu, C.L. ; Yang, Y.H. ; Cao, J.M. ; Hu, G.C. ; Li, Y.B. ; Xu, Y.Z. ; Bai, D.
Author_Institution :
Beijing M, China
Abstract :
A dynamic threshold MOSFET (DTMOS) was invented by Assaderaghi et al.(1994), connecting the gate to the contact terminal. There are four ways to connect the contact terminal: (1) keep the contact terminal floating; (2) connect the contact terminal to the source; (3) connect the contact terminal to the gate; and (4) take the contact terminal as a new input. We have designed fabricated and simulated all four ways of connecting the contact terminal
Keywords :
CMOS integrated circuits; MOSFET; semiconductor device models; silicon-on-insulator; DTMOS transistors; SOI MOS; contact terminal; dynamic threshold MOSFET; floating contact; gate contact; performance simulations; source contact; Circuit simulation; Integrated circuit measurements; Integrated circuit technology; Joining processes; MOSFET circuits; Physics; Ring oscillators; Silicon; Thin film circuits; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786069
