A novel analytical physical model for thin film SOI RESURF structure based on 2-D Poisson equation

In this paper, a novel analytical physical model for a thin film SOI RESURF structure is developed, based on the 2D Poisson equation, and the influence of the field SiO₂ interface charge is considered. The thin film SOI RESURF structure is analyzed using this novel model. There are two electric field peak values at the interfaces of the p⁺n and n⁺n junctions. The potential distribution is similar to a step between the p⁺n and n⁺ n junctions. The field SiO₂ interface charge makes the electric field increase at the interface of the p⁺n junction, and reduces the electric field at the interface of the n⁺n junction. The analytical results agree with the simulations of MEDICI