DocumentCode :
3068069
Title :
Experimental studies of SOI DTMOSFET for low-voltage low-power applications
Author :
Chuanliang, Wu ; Jianmin, Cao ; Chang, Huang ; Guicai, Hu ; Yinbo, Li ; Yangzhen, Xu
Author_Institution :
Xi´´an Microelectron. Inst., China
fYear :
1998
fDate :
1998
Firstpage :
732
Lastpage :
733
Abstract :
The structure of DTMOSFET is proposed. SOI DTMOSFET devices and ring oscillators are designed and fabricated. The characteristics of DTMOS devices and the speed performance of DTMOS-based ring oscillators are discussed
Keywords :
MOSFET; oscillators; silicon-on-insulator; DTMOS devices; DTMOS-based ring oscillators; SOI DTMOSFET; Si-SiO2; dynamic threshold voltage MOSFET; low-voltage low-power applications; ring oscillators; speed performance; structure; CMOS process; Fabrication; Implants; Inverters; MOSFET circuits; Microelectronics; Ring oscillators; Silicon; Threshold voltage; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
Type :
conf
DOI :
10.1109/ICSICT.1998.786091
Filename :
786091
Link To Document :
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