• DocumentCode
    3068069
  • Title

    Experimental studies of SOI DTMOSFET for low-voltage low-power applications

  • Author

    Chuanliang, Wu ; Jianmin, Cao ; Chang, Huang ; Guicai, Hu ; Yinbo, Li ; Yangzhen, Xu

  • Author_Institution
    Xi´´an Microelectron. Inst., China
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    732
  • Lastpage
    733
  • Abstract
    The structure of DTMOSFET is proposed. SOI DTMOSFET devices and ring oscillators are designed and fabricated. The characteristics of DTMOS devices and the speed performance of DTMOS-based ring oscillators are discussed
  • Keywords
    MOSFET; oscillators; silicon-on-insulator; DTMOS devices; DTMOS-based ring oscillators; SOI DTMOSFET; Si-SiO2; dynamic threshold voltage MOSFET; low-voltage low-power applications; ring oscillators; speed performance; structure; CMOS process; Fabrication; Implants; Inverters; MOSFET circuits; Microelectronics; Ring oscillators; Silicon; Threshold voltage; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-4306-9
  • Type

    conf

  • DOI
    10.1109/ICSICT.1998.786091
  • Filename
    786091
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3068069