High performance SiGeC HBT technology for radio frequency applications

Author

Ostling, Mikael ; Haralson, Erik ; Malm, B. Gunnar

Author_Institution

Dept. of Microelectron. & Inf. Technol., KTH - R. Inst. Technol., Kista, Sweden

fYear

2004

fDate

24-27 Aug. 2004

Firstpage

480

Lastpage

483

Abstract

In this paper, the current status of SiGeC bipolar technologies for high-speed and wireless applications is reviewed. The key process features and radio frequency (RF) performance of advanced SiGe bipolar processes are summarized. The different approaches to form a self-aligned base-emitter structure with minimum parasitics are discussed. SiGe:C epitaxy allows very good profile control of the narrow base doping peak, which enables cut-off frequencies above 300 GHz. Downscaling of device dimensions for improved RF performance is also investigated using TCAD simulations. Finally, novel device structures using SOI substrates are discussed.

Keywords

Ge-Si alloys; carbon; doping profiles; epitaxial growth; heterojunction bipolar transistors; semiconductor materials; silicon-on-insulator; submillimetre wave transistors; technology CAD (electronics); 300 GHz; HBT technology; SOI substrates; SiGe:C; TCAD; device dimension downscaling; epitaxy; high-speed bipolar processes; narrow base doping peak profile control; parasitics minimization; radio frequency devices; self-aligned base-emitter structure; CMOS technology; Doping profiles; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Phase noise; Radio frequency; Silicon germanium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Science Conference, 2004. Proceedings. 2004 Asia-Pacific

Print_ISBN

0-7803-8404-0

Type

conf

DOI

10.1109/APRASC.2004.1422525

Filename

1422525