• DocumentCode
    3068740
  • Title

    Study on the interfacial SiO2 layer of silicon wafer direct bonding

  • Author

    He, Jin ; Wang, Xin ; Bi-Chen, Xing

  • Author_Institution
    Inst. of Microelectron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    765
  • Lastpage
    767
  • Abstract
    The interfacial SiO2 layer of silicon wafer direct bonding has been studied in this paper. By means of AES and SEM, it has been found that interfacial SiO2 disintegrates into sphere-shaped islands with average radius much larger than the thickness of the native oxide layer, and is of amorphous material, SiO2, experimentally. The theoretical analysis shows that SiO 2 spontaneously disintegrates into islands in order to decrease the interface free energy as much as possible
  • Keywords
    Auger electron spectra; amorphous state; elemental semiconductors; scanning electron microscopy; silicon; silicon compounds; wafer bonding; AES; SEM; Si-SiO2-Si; amorphous material; interface free energy; interfacial SiO2 layer; sphere-shaped islands; wafer direct bonding; Annealing; Bismuth; Boats; Cleaning; Conductivity; Silicon; Surface contamination; Temperature; Wafer bonding; Water pollution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-4306-9
  • Type

    conf

  • DOI
    10.1109/ICSICT.1998.786124
  • Filename
    786124
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3068740