DocumentCode :
3068790
Title :
Charging of Underlayer at Via Etch causing Slow Down in Oxide Etch Rate
Author :
Dao, Thuy ; Wu, Wei
Author_Institution :
Advanced Products Research and Development Laboratory
fYear :
1996
fDate :
14-14 May 1996
Firstpage :
54
Lastpage :
57
Keywords :
Artificial intelligence; Dielectric films; Dry etching; Laboratories; Plasma applications; Plasma chemistry; Plasma devices; Plasma materials processing; Silicon; Sputter etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Conference_Location :
Santa Clara, CA, USA
Print_ISBN :
0-9651577-0-9
Type :
conf
DOI :
10.1109/PPID.1996.715202
Filename :
715202
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3068790
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