DocumentCode
3068790
Title
Charging of Underlayer at Via Etch causing Slow Down in Oxide Etch Rate
Author
Dao, Thuy ; Wu, Wei
Author_Institution
Advanced Products Research and Development Laboratory
fYear
1996
fDate
14-14 May 1996
Firstpage
54
Lastpage
57
Keywords
Artificial intelligence; Dielectric films; Dry etching; Laboratories; Plasma applications; Plasma chemistry; Plasma devices; Plasma materials processing; Silicon; Sputter etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 1996 1st International Symposium on
Conference_Location
Santa Clara, CA, USA
Print_ISBN
0-9651577-0-9
Type
conf
DOI
10.1109/PPID.1996.715202
Filename
715202
Link To Document