Title :
Reactive ion etching of Si1-xGex alloy with hydrogen bromide
Author :
Kaicheng, Li ; Weifeng, Sun ; Qingping, Wang ; Jing, Zhang ; Yao, Wen ; Yan, Huang ; D´Avitaya, F. Amaud ; Lin, Guo ; Wu, Xiangdong
Author_Institution :
Nat. Key Lab. of Analog Integrated Circuits, Chongqing, China
Abstract :
The reactive ion etching (RIE) of Si1-xGex alloy with hydrogen bromide is described. The technologies of producing Si1-xGex devices are compatible with those of producing silicon devices, which is the major reason why Si1-xGex technologies have been developed so fast in the past few years. One of the key technologies is the etching of Si 1-xGex materials during the production of devices. The materials used were grown by SIVA32 MBE systems under 6.0×10 -10~6.0×10-11 Torr. The experimental results showed that the etch rate of Si1-xGex RIE increased monotonically with increased Ge-content in Si1-xGe x. The higher Ge-content is, the higher the ratio of Si1-xGex etch rate to Si etch rate is. For instance, when x=0.1, the ratio is 1.12; but, when x=0.18, the ratio is 1.35. The RIE rate of Ge epitaxial layers is higher than that of Si1-xGex, and is almost four times as high as that of monocrystalline Si
Keywords :
Ge-Si alloys; semiconductor epitaxial layers; semiconductor materials; sputter etching; Ge-content; MBE; SiGe; epitaxial layers; etch rate; reactive ion etching; Germanium alloys; Germanium silicon alloys; Heterojunction bipolar transistors; Hydrogen; Molecular beam epitaxial growth; Plasma applications; Plasma materials processing; Silicon alloys; Silicon germanium; Wet etching;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786146
