Title :
The study of growth and the properties of C in SiGeC alloy on Si by rapid thermal chemical vapor deposition
Author :
Zang, L. ; Jiang, N. ; Jiang, R.L. ; Zhu, S.M. ; Liu, X.B. ; Cheng, X.M. ; Han, P. ; Wang, R.H. ; Zhang, Yimin D.
Author_Institution :
Dept. of Phys., Nanjing Univ., China
Abstract :
Thin heteroepitaxial films of Si1-x-yGexC y have been grown on Si(100) substrates by rapid thermal chemical vapor deposition (RTCVD) using C2H4 as C source. The composition and microstructure of Si1-x-yGex Cy film were characterized by Auger Electron Spectroscopy (AES), Raman spectrum and Fourier transform infrared spectroscopy (FTIR). The results exhibit that lower temperature and higher SiH4/C2H4 flow ratio are helpful to form the substitutional C and improve the crystal quality. A possible mechanism for C incorporation in Si1-x-yGexCy layer grown by RTCVD using C2H4 is also proposed
Keywords :
Auger electron spectra; Ge-Si alloys; Raman spectra; infrared spectra; rapid thermal processing; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; vapour phase epitaxial growth; AES; C incorporation; Fourier transform infrared spectroscopy; Raman spectrum; Si; Si(100) substrates; SiGeC; crystal quality; microstructure; rapid thermal CVD; thin heteroepitaxial films; Chemical vapor deposition; Electrons; Fourier transforms; Infrared spectra; Microstructure; Raman scattering; Semiconductor films; Silicon alloys; Spectroscopy; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786150
