DocumentCode :
3069286
Title :
Switched-source-impedance CMOS circuit for low standby subthreshold current giga-scale LSI´s
Author :
Horiguchi, M. ; Sakata, T. ; Itoh, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
fYear :
1993
fDate :
19-21 May 1993
Firstpage :
47
Lastpage :
48
Abstract :
The reduction of exponentially increasing standby subthreshold current due to threshold-voltage (V/sub T/) scaling is one of the most important design issues for giga-scale LSIs operating at room temperature. This paper proposes a switched-source-impedance CMOS circuit featuring the subthreshold current reduction of LSIs in standby mode by 34 decades with minimum speed penalty in active mode. The circuit also features V/sub T/ variation immunity due to the negative feedback effect through the source impedance. This scheme permits battery backup even for giga-scale LSIs.
Keywords :
CMOS integrated circuits; DRAM chips; VLSI; digital integrated circuits; feedback; large scale integration; switched networks; battery backup; giga-scale LSIs; negative feedback effect; room temperature; standby mode; standby subthreshold current; subthreshold current reduction; switched-source-impedance CMOS circuit; threshold voltage scaling; CMOS integrated circuits; DRAM chips; Digital integrated circuits; Large-scale integration; Switched circuits; Very-large-scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 1993. Digest of Technical Papers. 1993 Symposium on
Conference_Location :
Kyoto, Japan
Type :
conf
DOI :
10.1109/VLSIC.1993.920533
Filename :
920533
Link To Document :
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