Title :
A theoretical study of field emission from p-type diamond
Author :
Huang, Qing-An ; Qin, Ming ; Zhang, Bin ; Zheng, Qi-Jing
Author_Institution :
Microelectron. Center, Southeast Univ., Nanjing, China
Abstract :
Field emission from polycrystalline diamond films is theoretically studied. Defects in the polycrystalline diamond are described as the defects of donor-type with a deep level within the band gap. The results show that field emission current from the conduction band and surface states may be ignored. Field emission from the p-type diamond is due to either a high surface field or negative electron affinity
Keywords :
conduction bands; deep levels; defect states; diamond; electron affinity; electron field emission; elemental semiconductors; semiconductor thin films; surface states; C; band gap; conduction band; defects; donor-type deep level; field emission; high surface field; negative electron affinity; p-type diamond; polycrystalline diamond films; surface states; Electron emission; Ionization; Microelectronics; Photonic band gap; Poisson equations; Semiconductivity; Semiconductor device doping; Semiconductor films; Semiconductor process modeling; Space charge;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786163
