Title :
Sub-1-/spl mu/A dynamic reference voltage generator for battery-operated DRAMs
Author :
Tanaka, H. ; Nakagome, Y. ; Etoh, J. ; Yamasaki, E. ; Aoki, M. ; Miyazawa, K.
Author_Institution :
Hitachi VLSI Eng. Corp., Tokyo, Japan
Abstract :
A new reference voltage generator featuring the dynamic operation of a threshold voltage difference (/spl Delta/V/sub T/) generator and voltage-up converter with current mirror circuits has been proposed. This generator efficiently reduces average current to less than 1 /spl mu/A, while maintaining high-accuracy and high-stability. These performances are enough for realizing high-density battery operated DRAMs with a low active and data-retention current comparable to SRAMs.
Keywords :
DRAM chips; reference circuits; signal generators; 1 muA; accuracy; active current; current mirror circuits; data-retention current; dynamic reference voltage generator; high-density battery operated DRAMs; stability; threshold voltage difference; voltage-up converter; DRAM chips; Signal generators;
Conference_Titel :
VLSI Circuits, 1993. Digest of Technical Papers. 1993 Symposium on
Conference_Location :
Kyoto, Japan
DOI :
10.1109/VLSIC.1993.920550
