• DocumentCode
    3069564
  • Title

    Adaptive Impedance Matching System

  • Author

    Li, Yang ; Du Cheng

  • Author_Institution
    Coll. of Electr. &Inf. Eng., Southwest Univ. for Nat., Chengdu, China
  • Volume
    3
  • fYear
    2010
  • fDate
    16-18 July 2010
  • Firstpage
    7
  • Lastpage
    9
  • Abstract
    In order to resolve the real-time, fast and stable matching problems as to the dynamic load of microwave plasma, including O2, N2, CF4, NF3, N2H2, etc, through the introduction of six-port test theory and impedance matching theory, the authors put forward a new method called automatic impedance match, which calculated reflectance using the FDTD algorithm. And they use the relationship between pin insertion depth and reflectance of port surface under HFSS simulation automatic impedance matching system to make pin insertion depth and port reflectance form corresponding relation. In the impedance matching system, use the corresponding relation so as to minimize the reflectance, and adjust pin insertion depth into the best position to achieve fast matching in impedance system. As simulation results indicate that the load impedance standing wave factor variation ranges in 0-10, the standing wave ratio (VSWR) of port could basically meet the engineering requirements.
  • Keywords
    finite difference time-domain analysis; high-frequency transmission lines; impedance matching; plasma simulation; plasma sources; FDTD algorithm; HFSS simulation; adaptive impedance matching system; automatic impedance matching system; dynamic load; impedance matching theory; load impedance standing wave factor; microwave plasma system; pin insertion depth; plasma source; six-port test theory; stable matching problem; standing wave ratio; Impedance; Impedance matching; Load modeling; Microwave theory and techniques; Pins; Plasmas; Reflectivity; HFSS; dynamic load; impedance matching; microwave;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information Technology and Applications (IFITA), 2010 International Forum on
  • Conference_Location
    Kunming
  • Print_ISBN
    978-1-4244-7621-3
  • Electronic_ISBN
    978-1-4244-7622-0
  • Type

    conf

  • DOI
    10.1109/IFITA.2010.126
  • Filename
    5634733