DocumentCode :
3069691
Title :
Analytical Circuit Model Approach to Charging Damage in Plasma/implantation Processing
Author :
En, William G. ; Shich, B.P. ; Cheung, Nathan W.
Author_Institution :
University of California, Berkeley
fYear :
1996
fDate :
13-14 May 1996
Firstpage :
77
Lastpage :
80
Keywords :
Analytical models; Circuit analysis; Electrons; Plasma density; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Plasma measurements; Plasma simulation; Plasma temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Print_ISBN :
0-9651577-0-9
Type :
conf
DOI :
10.1109/PPID.1996.715206
Filename :
715206
Link To Document :
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