Title :
Thin film growth conditions for CVD diamond under low pressure
Author :
Wang, Ji-Tao ; Liu, Zhi-Jie ; Zhang, Jim-Yun ; Jian-Yun Zhang ; Wan, Yong-Zhong
Author_Institution :
Dept. of Electron. Eng., Fudan Univ., Shanghai, China
Abstract :
Non-equilibrium stationary phase diagrams for diamond growth with nitrogen addition into the reaction system were calculated and coordinate well with published experimental results. Therefore they can direct the experimental research on the subject. The effects of nitrogen addition on the deposition of diamond films were discussed by using the phase diagrams. The nitrogen addition can accelerate the deposition rate of diamond films in two aspects: enhance the CH3 concentration at the growth surface and accelerate the abstraction of H atoms covering the growth surface sites
Keywords :
chemical vapour deposition; diamond; elemental semiconductors; phase diagrams; reaction kinetics theory; semiconductor growth; semiconductor thin films; surface chemistry; C; CH3 concentration; CVD diamond; H atoms; N2; abstraction; deposition rate; diamond growth; growth surface; low pressure; nitrogen addition; nonequilibrium stationary phase diagrams; phase diagrams; thin film growth; Chemical vapor deposition; Equations; Hydrogen; Nitrogen; Optical films; Plasma applications; Plasma chemistry; Thermal conductivity; Thermodynamics; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786189
